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High voltage transistors our low power loss, fast bipolar families of highvoltage transistors are ideally suited to high frequency switching in any powered application in need of bipolar transistors that can withstand high voltage pulses emi requirements. Transistor basics a bipolar junction transistor is a three layer npn or pnp semiconductor device. The collector is moderately doped and the emitter is heavily doped. It is recommended that transistors not be allowed to operate near these values, lest their lifespan be shortened. Nov 01, 2015 hj02 datasheet pdf vcbo600v, npn transistor, hj02 datasheet, hj02 pdf, pinout, hj02 equivalent, hj02 data, hj02 circuit, output. C f t jg t t o the ba01, ba01f, ba02 and ba02f are large current transistor arrays with 6 darlington transistor circuits builtin. The breakdown voltage is where the transistor will stop operating or be destroyed if it is given an input voltage of that amount. Detailed asi datasheets, specifications and package outline drawings are available as well.

It is particularly suited for 115 and 220 v switch. C description symbol value unit vcbo collector base voltage 500 v vceo collector. A typical switching circuit using a pnp transistor is shown at the left. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that.

As a design note, small signal transistors are used primarily when amplifying small signals, such as a few volts and only when using milliamperes of current. Hfe has minimum and maximum values, though both may not be listed. Ksp4445 npn epitaxial silicon transistor 2002 fairchild semiconductor corporation. Cross reference universal transistor reference page 1. I notice that there is a large discrepancy between the model test question on a full blown bipolar transistor circuit and the actual exam questions which are usually based on diode rectification circuits. The base region is much thinner than the either the collector or emitter regions. Power transistor datasheet, power transistor pdf, power transistor data sheet, datasheet, data sheet, pdf home all manufacturers by category part name, description or manufacturer contain.

Bjts have 3 terminals and come in two varieties, as npn and pnp transistors. You have clicked a page that seems to be very popular. Mje01a1 silicon npn transistor in a to92 plastic package. Design and specifications are each subject to change without notice. Then check out our high voltage devices with breakdown voltages from up to 400 v. Pin description 1base 2 collector 3 emitter absolute maximum ratingsta symbol parameter conditions value unit vcbo collectorbase voltage open emitter 1500 v vceo collectoremitter voltage open base 800 v vebo emitterbase voltage open collector 6. Silicon npn triple diffused type pct process transistor, c5353 pdf download toshiba, c5353 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits.

Baseemitter saturation voltage collectoremitter saturation voltage figure 3. Opamps have the very high voltage gain that is needed. Switchmode series npn silicon power transistors the mje09g is designed for high. Transistor amplifiers transistor has 3 legs, one of them is usually grounded. Continental device india limited an isots 16949, iso 9001 and iso 14001 certified company npn silicon planar epitaxial, high voltage cd02 fast switching power transistor tcd02 tin lead part lead free to92 plastic package b c e compact fluorescent lamps cfls absolute maximum rating ta 25. The collector region is usually thicker than the emitter as the largest. No mil spec parts use the to92 transistor because of the plastic package. It is defined as a gain because a small signal at the base produces a much larger signal at the collector. Transistor pnp silicon 27v ic5a to92high current amp order for 41 or more ship same day or within 48hrs. Power transistor crossreference list for motorola, philips and sgsthomson components.

Vce limits of the transistor that must be observed for reliable operation. Mje02 datasheet, mje02 pdf, mje02 data sheet, datasheet, data sheet, pdf, continental device india limited, 1. Our products transistors of high quality and low price, all meet rohs standards set by eu and are guaranteed by sgs unleaded environment certification. D switching times note in resistive switching circuits, rise, fall, and storage ti mes have been defined and apply to both current and voltage. The transistor is a semiconductor device than can function as a signal amplifier or as a solid state switch. The three layers are called the emitter, base and collector. Continental device india limited datasheet catalog.

A wide variety of 01 transistor options are available to you, there are 358 suppliers who sells 01 transistor on, mainly located in asia. Continental device india limited an isots 16949, iso 9001 and iso 14001 certified company npn silicon planar epitaxial transistor cd01 to 92 plastic package absolute maximum rating ta 25. Cd02 datasheet, equivalent, cross reference search. A0trans nte equivalent nte12 transistor pnp silicon. Mje01 datasheet, mje01 pdf, mje01 data sheet, mje01 manual, mje01 pdf, mje01, datenblatt, electronics mje01, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Absolute maximum ratings symbol parameter value unit vces collectoremitter voltage vbe 0 700 v vceo collectoremitter voltage ib 0 400 v vebo emitterbase voltage ic 0, ib 0. We list numerous commercial part numbers and their asi exact replacement or suggest a similar device.

Transistors peter mathys ecen 1400 transistor families there are two major families of transistors. Continental device india limited c120 naraina industrial area, new delhi 110 028, india. C description symbol value unit vcbo collector base voltage 500 v vceo collector emitter voltage 400 v vebo emitter base voltage 9. Silicon npn transistor in a to126fr plastic package. Crossreferences are not magic, understanding of the circuit and a parametric search of the important parameters is much more reliable. Ask factory for the current technical specifications before purchase andor use. Nov 07, 2016 01s8d datasheet npn transistor jtd semi, 01 datasheet, 01s8d pdf, 01s8d pinout, 01s8d manual, 01s8d schematic, 01s8d equivalent. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750. Aug 25, 2011 crossreferences are not magic, understanding of the circuit and a parametric search of the important parameters is much more reliable. No derating curve is listed for a transistor in a to92 package. Hj 02 npn epitaxial silicon transistor absolute maximum ratings ta25. This is one of the simplest to construct current source, yet its operation is very reliable and suited for driving laser diodes. Vcb is the voltage between the collector and the base. They are particularly suited for 115 and 220 v switchmode applications such as switching regulators, inverters, motor controls, solenoidrelay drivers and deflection circuits.

I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Jul 25, 2019 e w kenyon audio book new version of we are the world singers koda the warmth download christian book bible bullies jun pyo and jandi moments with the book diya aur baati hum episode filmovi na srpskom youtube scandal in the house hd torrent jadwal film horor barat terbaru medium saison 1 episode 1 clem download vf the water is wide movie youtube the flayed god pdf merge russian automotive. Transistor pnp silicon 27v ic5a to92high current amp. Npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 400 v vceo collectoremitter voltage 400 v vebo emitterbase voltage 7 v ic collector current 100 ma pc collector. Silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case. Product specification shenzhen 02 transistor signal semiconductors. Depending on the current demand and voltage drop, a heatsink for the bd9 transistor will be required. Baseemitter saturation voltage collectoremitter saturation voltage figure 4.

Mje09 switchmode series npn silicon power transistors. Bipolar junction transistors bjt and fieldeffect transistorsfet. Continental device india limited data sheet page 4 of 4. A transistor produces a lot of distortion because it is not linear. High voltage fastswitching npn power transistor description the utc mje02 designed for use in highvolatge, high speed,power switching in inductive circuit, it is particularly suited for 115 and 220v switchmode applications such as switching regulators,inverters, dcdc converter, motor. Hj02 datasheet pdf vcbo600v, npn transistor, hj02 datasheet, hj02 pdf, pinout, hj02 equivalent, hj02 data, hj02 circuit, output. Ltd 1 qwr205004,a silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case. N stands for ntype material and p stands for ptype material. It needs to have a circuit with very high voltage gain so that a lot of negative feedback can be used to cancel the distortion. Semiconductor transistor, diode, ic cross reference. When using larger voltage and current larger power, using many volts or amperes of current, a power transistor should be used. Collector output capacitance 0 20 406080 100 0 2 4 6 8 10 12 14 16 18 20 ib 120ua ib 80ua ib 60ua ib 40ua ib 100ua ib 20ua i c ma.

An overloaded transistor produces more distortion than a transistor that is not overloaded. So called equivalent parts, or nte replacements, may not work at all in some cases, because they were worse in some spec, or the circuit was designed with the assumptions that the part had a fairly low bandwidth. Mje02 datasheet, mje02 pdf, mje02 data sheet, mje02 manual, mje02 pdf, mje02, datenblatt, electronics mje02, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Mje07d mje07 switchmode npn bipolar power transistor for switching power supply applications the mje07 is designed for high. In a transistor a very small current input signal flowing emitter tobase is able to control a much larger current which flows from the system power. Symbol vcbo vceo vebo pc tj tstg parameter collectorbase voltage collectoremitter voltage. Mje02g1 silicon npn transistor in a to92 plastic package.